Datasheet Summary
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AOU414 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU414 is Pbfree (meets ROHS & Sony 259 specifications). AOU414L is a Green Product ordering option. AOU414 and AOU414L are electrically identical.
TO-251 D
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.7mΩ (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 4.5V)
Top View Drain Connected to Tab G D...