Datasheet Summary
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AOU417 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications).
Features
VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
TO-251
Top View Drain Connected to...