CEB62A2 Datasheet | CET

FEATURES 20V, 55A, RDS(ON) = 10mΩ @VGS = 4.5V. RDS(ON) = 14mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 20 Units V V A A W W/ C C ±12 55 220 54 0.36 -55 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2.8 62.5 Units C/W C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://.cetsemi. CEP62A2/CEB62A2 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 25A 0.9 VDS = 15V, ID = 50A, VGS = 5V VDD = 15V, ID = 25A, VGS = 5V, RGEN = 5.6Ω 17 16 68 31 31 4.6 10 55 1.2 35 33 140 65 40 ns ns ns ns n C n C n C A V g FS Ciss Coss Crss VDS = 10V, ID = 25A VDS = 10V, VGS = 0V, f = 1.0 MHz 35 2800 520 380 S p F p F p F VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 4.5V, ID = 25A VGS = 2.5V, ID = 25A 0.5 7 10 1.2 10 14 V mΩ mΩ BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA...