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CEB62A3 - N-Channel MOSFET

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Features

  • 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S.

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Datasheet Details

Part number CEB62A3
Manufacturer CET
File Size 55.08 KB
Description N-Channel MOSFET
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CEP62A3/CEB62A3 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D 4 4 D G G D S G S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Unit V V A A A W W/ C C Ć20 60 180 60 68 0.
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