CEB630N
CEB630N is N-Channel Enhancement Mode Field Effect Transistor manufactured by CET.
FEATURES
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.36Ω 0.36Ω
0.36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CEB SERIES TO-263(DD-PAK)
CEP SERIES TO-220
D S CEF SERIES
TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
200 ±20 9 36 78 0.63
9d 36 d 33 0.27
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.6 62.5
3.7 65
Units
V V A A W W/ C...
