CET CEB630N
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | CEB630N |
|---|---|
| Datasheet | CEB630N Download |
| Manufacturer |  CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
FEATURES
Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F SABSOLUTE MAXIMUM RATINGS
Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20 9 36 78 0.63 9d 36 d 33 0.27 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.6 62.5 3.7 65 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2008.Oct. CEP630N/CEB630N CEF630NELECTRICAL CHARACTERISTICS
Tc =...
