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CEB630N - N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S.

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Datasheet Details

Part number CEB630N
Manufacturer CET
File Size 349.80 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEB630N Datasheet

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CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM e PD 200 ±20 9 36 78 0.63 9d 36 d 33 0.