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CEG8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface Mount Package.
ESD Protected: HBM 2000 V
G2 S2 S2 D
TSSOP-8
G1 S1 S1 D
D
*1K G1
*1K G2
S1 *Typical value by design
D1 S1 2 S1 3 G1 4
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 6.5 IDM 25
Maximum Power Dissipation
PD 1.
CEG8208 Datasheet
