Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
Features
20V, 5.2A , RDS(ON) TYP = 25 mΩ @VGS = 4.5V. RDS(ON) TYP = 30mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
Halogen free.
4 5 6
3 2 1 TSOP-6
G1(6)
D1(2)
G2(4) S1(1)
D2(5)...