CS82N25AKR-G Datasheet | CR Micro

Silicon N-Channel Power MOSFET ○R CS82N25 AKR-G General Description： CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID PD (TC=25℃) RDS(ON)Typ TO-247 can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the RoHS standard. Features ： - Fast Switching - Low ON Resistance(Rdson≤35mΩ) - Low Gate Charge (Typical Data: 148.5nC) - Low Reverse transfer capacitances(Typical: 73.9pF) - 100% Single Pulse avalanche energy Test -...