CS82N25AKR-G Overview
： CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID PD (TC=25℃) RDS(ON)Typ TO-247 can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the RoHS...
CS82N25AKR-G Key Features
- Fast Switching
- Low ON Resistance(Rdson≤35mΩ)
- Low Gate Charge (Typical Data: 148.5nC)
- Low Reverse transfer capacitances(Typical: 73.9pF)
- 100% Single Pulse avalanche energy Test
- Halogen Free