CS82N25AKR-G - Silicon N-Channel Power MOSFET

CR Micro

General Description

CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤35mΩ).
Low Gate Charge (Typical Data: 148.5nC).
Low Reverse transfer capacitances(Typical: 73.9pF).
100% Single Pulse avalanche energy Test.
Halogen Free.

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CS82N25AKR-G silicon n-channel power mosfet by CR Micro - Datasheet Preview

Datasheet Details

Part number	CS82N25AKR-G
Manufacturer	CR Micro
File Size	832.76 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS82N25AKR-G Datasheet

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Silicon N-Channel Power MOSFET ○R CS82N25 AKR-G General Description： CS82N25 AKR-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor VDSS ID PD (TC=25℃) RDS(ON)Typ TO-247 can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-247, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤35mΩ)  Low Gate Charge (Typical Data: 148.5nC)  Low Reverse transfer capacitances(Typical: 73.9pF)  100% Single Pulse avalanche energy Test  Halogen Free Applications： Power switch circuit of electron ballast and adaptor.