CTL1103NS Datasheet | CT Micro

CTL1103NS N-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS 30 V - Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A - Continuous Drain Current at TC=25℃ ID = 11A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - Lithium Ion Battery Description The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Pin 1 Source: Gate: Drain: 1, 2, 3 4 5, 6, 7, 8 CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2013 CTL1103NS N-Channel Enhancement...