CTL505NS10-T52 Key Features
- Drain-Source Breakdown Voltage VDSS 100V
- Drain-Source On-Resistance
- Continuous Drain Current at TC=25℃ID =50.5A
- Advanced high cell density Trench Technology
- RoHS pliance & Halogen Free
- Part: CTL505NS10-T52
- Manufacturer: CT Micro
- Size: 1.02 MB
Related CT Micro Datasheets
| Part Number | Description |
|---|---|
| CTL550NS08-T52 | N-Channel MOSFET |
| CTL5702 | 2.5A MOSFET/IGBT Gate Driver Optocoupler |
| CTL0015PS-R3 | P-Channel MOSFET |
| CTL0025NS-R3 | N-Channel MOSFET |
| CTL0035NS-R3 | N-Channel MOSFET |
CTL505NS10-T52 Description
The CTL505NS10-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.