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CTL550NS08-T52 Datasheet N-Channel MOSFET

Manufacturer: CT Micro

General Description

The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

Overview

CTL550NS08-T52 N-Channel Enhancement MOSFET.

Key Features

  • Drain-Source Breakdown Voltage VDSS 80V.
  • Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V, ID= 40A.
  • Continuous Drain Current at TC=25℃ID =55A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.