CTLM16PS05-R3 Datasheet | CT Micro

CTLM16PS05-R3 P-Channel Enhancement MOSFET Features - Drain-Source Breakdown Voltage VDSS - 50 V - Drain-Source On-Resistance RDS(ON) 2Ω, at VGS= - 10V, IDS= - 100m A RDS(ON) 2Ω, at VGS= - 5.0V, IDS= - 100m A ℃- Continuous Drain Current at TA=25 ID = - 160m A - Advanced high cell density Trench Technology - Ro HS pliance & Halogen Free Applications - Power Management - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch Description The CTLM16PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source...