CTLM17NS10-R3 - N-Channel MOSFET

Product Overview

CT Micro

Datasheet Details

Part number	CTLM17NS10-R3
Manufacturer	CT Micro
File Size	527.19 KB
Description	N-Channel MOSFET
Datasheet	CTLM17NS10-R3 Datasheet
Additional preview pages of the CTLM17NS10-R3 datasheet.

Product details

Description

The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management LCD Display inve

Features

Drain-Source Breakdown Voltage VDSS 100 V.
Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃.
Continuous Drain Current at TA=25 ID =0.17A.
Advanced high cell density Trench Technology.
RoHS Compliance & Halogen Free.

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Published: May 20, 2020 |