Datasheet Details
| Part number | CTLM17NS10-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 527.19 KB |
| Description | N-Channel MOSFET |
| Datasheet | CTLM17NS10-R3-CTMicro.pdf |
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Overview: CTLM17NS10-R3 N-Channel Enhancement MOSFET.
| Part number | CTLM17NS10-R3 |
|---|---|
| Manufacturer | CT Micro |
| File Size | 527.19 KB |
| Description | N-Channel MOSFET |
| Datasheet | CTLM17NS10-R3-CTMicro.pdf |
|
|
|
The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Applications • Power Management • LCD Display inverter • DC/DC Converter • Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTLM17NS10-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions 100 ±20 0.17 0.7 0.36 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 350 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Jun, 2015 CTLM17NS10-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Test Conditions VGS= 0V, ID= 250µA VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V Min Typ Max Units Notes 100 - - V -- 1 µA - - ±100 nA On Characteristics Symbol Parameters RDS(ON) Drain-Source On-Resistance VGS(th) Gate-Source Threshold Voltage Test Conditions VGS = 10V, ID = 100mA VGS = 4.5V, ID =100mA
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