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CTLM17NS10-R3 - N-Channel MOSFET

General Description

The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Power Management LCD Display inve

Key Features

  • Drain-Source Breakdown Voltage VDSS 100 V.
  • Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃.
  • Continuous Drain Current at TA=25 ID =0.17A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTLM17NS10-R3
Manufacturer CT Micro
File Size 527.19 KB
Description N-Channel MOSFET
Datasheet download datasheet CTLM17NS10-R3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTLM17NS10-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 100 V • Drain-Source On-Resistance RDS(ON) 3Ω, at VGS= 10V, ID= 100mA RDS(ON) 3Ω, at VGS= 4.5V, ID= 100mA ℃• Continuous Drain Current at TA=25 ID =0.17A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTLM17NS10-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.