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MX2319 - P-Channel Enhancement Mode Power MOSFET

General Description

The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switching application and a wide variety of other applications.

Key Features

  • VDS >=-18V,ID = -7A k RDS(ON)(Typ. ) =17mΩ@ VGS=-4.5V RDS(ON) (Typ. )= 22mΩ @ VGS=-2.5V e Asvanced trench MOSFET process technology T Ultra low on-resistance with low gate charge e.

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Datasheet Details

Part number MX2319
Manufacturer ChipSourceTek
File Size 0.95 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2319 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX2319 P-Channel Enhancement Mode Power MOSFET Description The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications. s G General Features VDS >=-18V,ID = -7A k RDS(ON)(Typ.) =17mΩ@ VGS=-4.5V RDS(ON) (Typ.)= 22mΩ @ VGS=-2.