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MX2319 - P-Channel Enhancement Mode Power MOSFET

Description

The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V.

This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • VDS >=-18V,ID = -7A k RDS(ON)(Typ. ) =17mΩ@ VGS=-4.5V RDS(ON) (Typ. )= 22mΩ @ VGS=-2.5V e Asvanced trench MOSFET process technology T Ultra low on-resistance with low gate charge e.

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Datasheet preview – MX2319

Datasheet Details

Part number MX2319
Manufacturer ChipSourceTek
File Size 0.95 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MX2319 Datasheet
Additional preview pages of the MX2319 datasheet.

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Full PDF Text Transcription

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MX2319 P-Channel Enhancement Mode Power MOSFET Description The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications. s G General Features VDS >=-18V,ID = -7A k RDS(ON)(Typ.) =17mΩ@ VGS=-4.5V RDS(ON) (Typ.)= 22mΩ @ VGS=-2.
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