MXD30N100
MXD30N100 is N-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
DESCRIPTION
The MXD30N100 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
APPLICATION
- VDS=30V, ID=100A
- Battery management
RDS(ON)(Typ.)=5.5mΩ @ VGS=4.5V
- Motor controller and driver
RDS(ON)(Typ.)=4.3mΩ @ VGS=10V
- PWM applications
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
技 k PINOUT
- Load switch
特科 ce Te Schematicdiagram
Marking and pin Assignment r ORDERING INFORMATION
Part Number
源 u MX30N100
Storage Temperature -55°C to 175°C
TO-252-2L top & bottom view
Package TO-252-2L
Devices Per Reel
- o ABSOLUTE MAXIMUM RATINGS(TC=25°C unless otherwise noted)
矽 S Parameter
Drain-Source Voltage p Gate-Source Voltage
Drain Current-Continuous i Drain Current-Continuous(TC=100°C)
Pulsed Drain Current(Note1) h Maximum Power Dissipation C Single Pulse Avalanche Energy(L=0.5m H)
Symbol VDS VGS ID ID IDM PD EAS
Limit 30 ±20 100 70 350 110 298
Unit V V A A A W m J
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 175
°C
THERMAL RESISTANCE
Thermal Resistance, Junction-to-Case(Note2)
RθJC
ºC/W...