MXD6888 Datasheet | ChipSourceTek

DESCRIPTION The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. GENERAL FEATURES APPLICATION - VDS=60V, ID=80A - Power Switching Application RDS(ON)(Typ.)=6.8mΩ @ VGS=10V - Hard Switched and High Frequency - Special Designed for E-Bike Controller Circuits Application - Ultra Low On-Resistance - High UIS and UIS 100% Test 技 k PINOUT - Uninterruptible Power Supply 源特科rce Te Schematic diagram Marking and pin Assignment 矽 ou KEY PERFORMANCE PARAMETERS Parameter S VDS @ TA=25℃ RDS(ON)(Typ.) @ VGS=10V ip Qg(Typ.) ID @ TA=25℃ h PD @ TA=25℃ CTJ, TSTG Value 60 6.8 56 80 75 -55 to 175 TO-252-2L top view Unit V mΩ n C A W °C PACKAGE INFORMATION Package TO-252-2L TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 第1页共7页 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@Chip Source Tek. In Fo@Chip Source Tek. N-Channel Enhancement Mode Power MOSFET MXD6888 ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage...