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N-Channel Enhancement Mode Power MOSFET MXD6888
DESCRIPTION
The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
GENERAL FEATURES
APPLICATION
VDS=60V, ID=80A
Power Switching Application
RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
Hard Switched and High Frequency
Special Designed for E-Bike Controller
Circuits
Application Ultra Low On-Resistance High UIS and UIS 100% Test
k PINOUT
Uninterruptible Power Supply
rceTe Schematic diagram
Marking and pin Assignment
ou KEY PERFORMANCE PARAMETERS
Parameter
S VDS @ TA=25℃
RDS(ON)(Typ.) @ VGS=10V
ip Qg(Typ.)
ID @ TA=25℃
h PD @ TA=25℃ CTJ, TSTG
Value 60 6.