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MXD6888 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

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Datasheet Details

Part number MXD6888
Manufacturer ChipSourceTek
File Size 1.24 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXD6888 Datasheet
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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET MXD6888 DESCRIPTION The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. GENERAL FEATURES APPLICATION  VDS=60V, ID=80A  Power Switching Application RDS(ON)(Typ.)=6.8mΩ @ VGS=10V  Hard Switched and High Frequency  Special Designed for E-Bike Controller Circuits Application  Ultra Low On-Resistance  High UIS and UIS 100% Test k PINOUT  Uninterruptible Power Supply rceTe Schematic diagram Marking and pin Assignment ou KEY PERFORMANCE PARAMETERS Parameter S VDS @ TA=25℃ RDS(ON)(Typ.) @ VGS=10V ip Qg(Typ.) ID @ TA=25℃ h PD @ TA=25℃ CTJ, TSTG Value 60 6.
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