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MXD6888K - N-Channel Enhancement Mode Power MOSFET

General Description

The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

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Datasheet Details

Part number MXD6888K
Manufacturer ChipSourceTek
File Size 820.87 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXD6888K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET MXD6888K DESCRIPTION The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. GENERAL FEATURES APPLICATION  VDS=60V, ID=80A RDS(ON)(Typ.)=6.8mΩ @ VGS=10V  Special Designed for E-Bike Controller Application k  Ultra Low On-Resistance  High UIS and UIS 100% Test e PINOUT  Power Switching Application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply rceT Schematic diagram Marking and pin Assignment TO-252-2L top view u KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted) o Parameter VDS @ TC=25°C S RDS(ON)(Typ.) @ VGS=10V Qg(Typ.