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MXD30N80 - N-Channel Enhancement Mode Power MOSFET

General Description

The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .

It can be used in a wide variety of applications.

Key Features

  • D.
  • VDS =30V，ID =80A.
  • RDS(ON)(Typ. )4.6mΩ @ Vgs=10V.
  • RDS(ON)(Typ. )6mΩ @ Vgs=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS k.
  • Excellent package for good heat dissipation Te.

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Datasheet Details

Part number MXD30N80
Manufacturer ChipSourceTek
File Size 814.56 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXD30N80 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET Description The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge . It can be used in a wide variety of applications. MXD30N80 s G General Features D  VDS =30V，ID =80A  RDS(ON)(Typ.)4.6mΩ @ Vgs=10V  RDS(ON)(Typ.)6mΩ @ Vgs=4.