MXD30N80 Datasheet | ChipSourceTek

Description The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge . It can be used in a wide variety of applications. MXD30N80 s General Features - VDS =30V，ID =80A - RDS(ON)(Typ.)4.6mΩ @ Vgs=10V - RDS(ON)(Typ.)6mΩ @ Vgs=4.5V Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS 技 k - Excellent package for good heat dissipation 科 Te Application e - Power switching application - Hard switched and high frequency circuits 特 c - Uninterruptible power supply XXXXX Marking and pin assignment 矽源 Sour Absolute Maximum Ratings (TA=25℃ unless otherwise noted) ip Drain-Source Voltage Ch Gate-Source Voltage Parameter Symbol VDS VGS TO-252-2L top view Limit 30 ±20 Unit Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating...