MXD30N80 Description
The MXD30N80 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge . It can be used in a wide variety of applications.
MXD30N80 Key Features
- VDS =30V，ID =80A
- RDS(ON)(Typ.)4.6mΩ @ Vgs=10V
- RDS(ON)(Typ.)6mΩ @ Vgs=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation 科 Te Application e
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply