MXD50N06 Datasheet | ChipSourceTek

DESCRIPTION The MXD50N06 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES - VDS=60V, ID=50A RDS(ON)(Typ.)=11.5mΩ @ VGS=10V - Ultra Low On-Resistance - High UIS and UIS 100% Test APPLICATION - Power switching application - Load switch PINOUT 科技Tek Schematic diagram 特 e ORDERING INFORMATION TO-252 top view 源 c Device r MXD50N06 Storage Temperature -55°C to 175°C Package TO-252 Devices Per Reel - 矽 u KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted) o Parameter S Drain-Source Voltage(VGS=0V) p Gate-Source Voltage(VDS=0V) i Drain Current-Continuous(TC=25°C) Drain Current-Continuous(TC=100°C) Ch Drain Current-Continuous@Current-Pulsed(Note 1) Symbol VDS VGS ID ID IDM(pluse) Value 60 ±25 50 31 180 Unit V V A A A Maximum Power Dissipation(TC=25°C) Single Pulse Avalanche Energy(Note 2) 196 m J Operating Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C THERMAL CHARACTERISTIC Parameter Symbol Thermal Resistance, Junction-to-Case RθJC Note 1.Repetitive Rating: Pulse width limited by maximum junction temperature Note 2.EAS condition:TJ=25°C,VDD=30V,VG=10V, RG=25Ω Value 2.2 Unit...