MXD50N06 Description
The MXD50N06 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
MXD50N06 Key Features
- VDS=60V, ID=50A RDS(ON)(Typ.)=11.5mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Power switching application
- Load switch
- 矽 u KEY PERFORMANCE PARAMETERS(TA=25°C unless otherwise noted)
- 55 to 175
- Zero Gate Voltage Drain Current
- ±100 nA
- 11.5 15 mΩ