MXD50N06 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

Features

VDS=60V, ID=50A RDS(ON)(Typ. )=11.5mΩ @ VGS=10V.
Ultra Low On-Resistance.
High UIS and UIS 100% Test.

ChipSourceTek

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Datasheet Details

Part number	MXD50N06
Manufacturer	ChipSourceTek
File Size	1.53 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MXD50N06 Datasheet
Additional preview pages of the MXD50N06 datasheet.

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET MXD50N06 DESCRIPTION The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES  VDS=60V, ID=50A RDS(ON)(Typ.)=11.

Published: Feb 18, 2025 |