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MXD50N06 - N-Channel Enhancement Mode Power MOSFET

General Description

The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

Those devices are suitable for use in PWM, load switching and general purpose applications.

Key Features

  • VDS=60V, ID=50A RDS(ON)(Typ. )=11.5mΩ @ VGS=10V.
  • Ultra Low On-Resistance.
  • High UIS and UIS 100% Test.

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Datasheet Details

Part number MXD50N06
Manufacturer ChipSourceTek
File Size 1.53 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXD50N06 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Power MOSFET MXD50N06 DESCRIPTION The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES  VDS=60V, ID=50A RDS(ON)(Typ.)=11.