CY7C1347D Overview
This Cypress Synchronous Burst SRAM employs high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors. The CY7C1347D SRAM integrate 131,072 x 36 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation.
CY7C1347D Key Features
- Fast access times: 2.5 and 3.5 ns
- Fast clock speed: 250, 225, 200, and 166 MHz
- 1.5-ns set-up time and 0.5-ns hold time
- Fast OE access times: 2.5 ns and 3.5 ns
- Optimal for depth expansion (one cycle chip deselect to eliminate bus contention)
- 3.3V -5% and +10% power supply
- 3.3V or 2.5V I/O supply
- 5V tolerant inputs except I/Os
- Clamp diodes to VSS at all inputs and outputs
- mon data inputs and data outputs