Datasheet Summary
4-Mbit (256Kx18) Pipelined SRAM with NoBL™ Architecture
Features
- Pin patible and functionally equivalent to ZBT™ devices
- Internally self-timed output buffer control to eliminate the need to use OE
- Byte Write capability
- 256K x 18 mon I/O architecture
- Single 3.3V power supply
- 2.5V / 3.3V I/O Operation
- Fast clock-to-output times
- 2.6 ns (for 250-MHz device)
- 2.6 ns (for 225-MHz device)
- 2.8 ns (for 200-MHz device)
- 3.5 ns (for 166-MHz device)
- 4.0 ns (for 133-MHz device)
- 4.5 ns (for 100-MHz device)
- Clock Enable (CEN) pin to suspend operation
- Synchronous self-timed writes
- Asynchronous output enable (OE)
- JEDEC-standard 100 TQFP package
- Burst...