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BTB1205I3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA.
  • Excellent DC current gain characteristics.
  • Fast switching speed.
  • Large current capacity.
  • RoHS compliant package BVCEO IC RCESAT -20V -5A 127mΩ typ.

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Datasheet Details

Part number BTB1205I3
Manufacturer Cystech Electonics Corp
File Size 186.06 KB
Description PNP Transistor
Datasheet download datasheet BTB1205I3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 BTB1205I3 Features • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Fast switching speed • Large current capacity • RoHS compliant package BVCEO IC RCESAT -20V -5A 127mΩ typ. Applications • Strobe, voltage regulators, relay drivers, lamp drivers Symbol BTB1805I3 Outline TO-251 B：Base C：Collector E：Emitter B C E BTB1205I3 CYStek Product Specification CYStech Electronics Corp.