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BTB1216J3 - PNP Transistor

Key Features

  • 4 Amps continuous current, up to 10 Amps peak current.
  • Very low saturation voltage.
  • Excellent gain characteristics specified up to 3 Amps.
  • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A.
  • RoHS compliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Symbol BTB1216J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Co.

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Datasheet Details

Part number BTB1216J3
Manufacturer Cystech Electonics Corp
File Size 264.37 KB
Description PNP Transistor
Datasheet download datasheet BTB1216J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 PNP Epitaxial Planar High Current (High Performance) Transistor BTB1216J3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A • RoHS compliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ.