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BTB1427M3 - PNP Transistor

Key Features

  • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A.
  • Excellent DC current gain characteristics Symbol BTB1427M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -20 -15 -6 -5 -10 (Note 1) 0.5 2 (Note 2) 150 -55~+150 Uni.

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Datasheet Details

Part number BTB1427M3
Manufacturer Cystech Electonics Corp
File Size 190.63 KB
Description PNP Transistor
Datasheet download datasheet BTB1427M3 Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 BTB1427M3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics Symbol BTB1427M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -20 -15 -6 -5 -10 (Note 1) 0.5 2 (Note 2) 150 -55~+150 Unit V V V A W °C °C Note : 1. Single Pulse Pw=10ms 2. When mounted on a 40 ×40 ×0.7 mm ceramic board.