BTB1427M3 Datasheet | Cystech Electonics Corp

Features - Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A - Excellent DC current gain characteristics Symbol Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -20 -15 -6 -5 -10 (Note 1) 0.5 2 (Note 2) 150 -55~+150 Unit V V V A W °C °C Note : 1. Single Pulse Pw=10ms 2. When mounted on a 40 ×40 ×0.7 mm ceramic board. CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - h FE f T Cob Min. -20 -15 -6 120 Typ. 120 60 Max. -0.5 -0.5 -1.0 560 Unit V V V µA µA V MHz p F .. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 2/5 Test Conditions IC=-50µA, IE=0 IC=-1m A, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50m A, f =30MHz VCB=-20V, f =1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range Q 120~270 R 180~390 S 270~560 Ordering Information Device BTB1386M3 Package SOT-89 Shipping 1000 pcs / Tape & Reel Marking BH CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current .. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 3/5 Saturation Voltage vs Collector Current 1000 Saturation Voltage---VCE(SAT)(m V) VCE=5V Current Gain---HFE 100 IC=40IB 10 IC=20IB IC=10IB 1 1 10 100 1000 10000 VCE=2V VCE=1V 10 1 10 100 1000 10000 Collector Current---IC(m A) Collector Current---IC(m A) Saturation Voltage vs Collector Current 10000 Saturation Voltage---VBE(SAT)(m V) Power Dissipation---PD(m W) 2.5 2 1.5 1 0.5 0 1 10 100 1000 10000...