BTB772AM3 Datasheet | Cystech Electonics Corp

Features - Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A - Excellent current gain characteristics - plementary to BTD882AM3 Symbol Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Limit -50 -50 -6 -3 -7 (Note 1) 600 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A m W W W °C/W °C/W °C/W °C °C RθJA Tj Tstg Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 3. When Mounted on a ceramic board with area measuring 40×40×1mm. BTB772AM3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE1 - h FE2 - h FE3 f T Cob Min. -50 -50 -6 52 100 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V µA µA V V MHz p F .. Spec. No. : C817M3-H Issued Date : 2003.06.17 Revised Date:2005.08.19 Page:2/5 Test Conditions IC=-50µA, IE=0 IC=-1m A, IB=0 IE=-50µA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20m A VCE=-2V, IC=-500m A VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE2 Rank Range Q 100~200 P 160~320 E 250~500 Ordering Information Device BTB772AM3 Package SOT-89 Shipping 1000 pcs / Tape & Reel Marking AE CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 10000 .. Spec. No. : C817M3-H Issued Date : 2003.06.17 Revised Date:2005.08.19 Page:3/5 Saturation Voltage vs Collector current Current gain---HFE VCE=5V...