Datasheet4U Logo Datasheet4U.com

BTB772SA3 - PNP Transistor

Key Features

  • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A.
  • Excellent current gain characteristics.
  • Complementary to BTD882SA3.
  • Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO.

📥 Download Datasheet

Datasheet Details

Part number BTB772SA3
Manufacturer Cystech Electonics Corp
File Size 332.62 KB
Description PNP Transistor
Datasheet download datasheet BTB772SA3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BTB772ST3 PNP Transistor CYStech
BTB772AJ3 PNP Transistor CYStech
BTB772AT3 PNP Transistor CYStech
BTB772J3 PNP Transistor CYStech
BTB772NUJ3 PNP Transistor CYStech

Other Datasheets by Cystech Electonics Corp

Part Number Description
BTB772AM3 PNP Transistor
BTB772I3 PNP Transistor
BTB772T3 PNP Transistor
BTB772T3S PNP Transistor
BTB1132M3 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:1/4 BTB772SA3 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package Symbol BTB772SA3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%.