BTB772SA3 Datasheet | Cystech Electonics Corp

Features - Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A - Excellent current gain characteristics - plementary to BTD882SA3 - Pb-free package Symbol Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : Single Pulse Pw≦350μs, Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd Tj Tstg Limit -50 -50 -5 -3 -7 (Note) 750 150 -55~+150 Unit V V V A A m W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO - VCE(sat) - VCE(sat) - VBE(sat) - h FE1 - h FE2 - h FE3 - h FE4 f T Cob Min. -50 -50 -5 100 160 160 100 Typ. -0.3 -1 80 55 Max. -1 -1 -1 -0.3 -0.5 -2 500 Unit V V V μA μA μA V V V MHz p F .. Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15 Page:2/4 Test Conditions IC=-100μA, IE=0 IC=-1m A, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-400m A, IB=-20m A IC=-2A, IB=-0.1A IC=-2A, IB=-0.2A VCE=-2V, IC=-20m A VCE=-2V, IC=-100m A VCE=-2V, IC=-500m A VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz - Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of h FE 3 Rank Range P 160~320 E 250~500 Characteristic Curves Current gain vs Collector current 1000 VCE=5V C-E saturation voltage vs Collector current C-E saturation voltage---VCE(SAT)(m V) 10000 Current...