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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4
BTB772T3/S
Features
• Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available
Equivalent Circuit
BTB772T3/S
Outline
TO-126
B：Base C：Collector E：Emitter
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 Unit V V V A A W °C °C
*1
Note : *1.
BTB772T3 Datasheet
