BTB772I3 Datasheet | Cystech Electonics Corp

Features - Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A - Excellent current gain characteristics - plementary to BTD882I3 - Ro HS pliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol Outline TO-251 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : - 1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 - 1 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) - VBE(sat) - h FE 1 - h FE 2 f T Cob Min. -40 -30 -5 120 180 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V μA μA V V MHz p F .. Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:2/5 Test Conditions IC=-50μA, IE=0 IC=-1m A, IB=0 IE=-50μA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20m A VCE=-2V, IC=-1A VCE=-5V, IE=-0.1A, f=100MHz VCB=-10V, f=1MHz - Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of h FE 2 Rank Range P 180~390 E 250~500 Ordering Information Device BTB772I3 Package TO-251 (Ro HS pliant) Shipping 80 pcs / tube, 50 tubes / box Marking B772 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector...