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BTB772I3 - PNP Transistor

Key Features

  • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTD882I3.
  • RoHS compliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol BTB772I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single.

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Datasheet Details

Part number BTB772I3
Manufacturer Cystech Electonics Corp
File Size 197.22 KB
Description PNP Transistor
Datasheet download datasheet BTB772I3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817I3-H Issued Date : 2003.04.02 Revised Date: 2009.02.04 Page:1/5 BTB772I3 Features • Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package BVCEO IC RCESAT -30V -3A 150mΩ Symbol BTB772I3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%.