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BTB772T3S - PNP Transistor

Download the BTB772T3S datasheet PDF. This datasheet also covers the BTB772T3 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTD882T3/S.
  • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTB772T3_CystechElectonicsCorp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BTB772T3S
Manufacturer Cystech Electonics Corp
File Size 193.86 KB
Description PNP Transistor
Datasheet download datasheet BTB772T3S Datasheet

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Other Datasheets by Cystech Electonics Corp

Part Number Description
BTB772T3 PNP Transistor
BTB772AM3 PNP Transistor
BTB772I3 PNP Transistor
BTB772SA3 PNP Transistor
BTB1132M3 PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTB772T3/S Features • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B：Base C：Collector E：Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 Note : *1.