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BTD2118J3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A.
  • Excellent current gain characteristics www. DataSheet4U. com.
  • Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Tempe.

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Datasheet Details

Part number BTD2118J3
Manufacturer Cystech Electonics
File Size 182.77 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2118J3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 BTD2118J3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics www.DataSheet4U.com • Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V *1 *2 A W °C °C Note : *1.