BTD2118J3 Datasheet | Cystech Electonics

Features - Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A - Excellent current gain characteristics .. - plementary to BTB1412J3 Symbol Outline TO-252 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 50 20 6 5 10 1 10 150 -55~+150 Unit V V V - 1 - 2 A W °C °C Note : - 1. Single Pulse , Pw≦380µs,Duty≦2%. - 2. When mounted on a 40- 40- 0.7mm ceramic board. CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - V CE(sat) .. - h FE f T Cob Min. 50 20 6 120 Typ. 0.35 150 35 Max. 0.5 0.5 1 560 Unit V V V µA µA V MHz p F Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50m A, f=100MHz VCB=20V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE Rank Range Q 120~270 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 Saturation Voltage-(m V) 1000 HFE@VCE=2V Current Gain--- HFE VCESAT@IC=20IB 100 .. 100 1 10 100 1000 10000 Collector Current---IC(m A) 1 0.1 1 10 100 1000 10000 Collector Current---IC(m...