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BTD2118LJ3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A.
  • Excellent DC current gain characteristics.
  • Complementary to BTB1412LJ3.
  • Pb-free package Symbol BTD2118LJ3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single.

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Datasheet Details

Part number BTD2118LJ3
Manufacturer Cystech Electonics
File Size 175.98 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2118LJ3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118LJ3 Spec. No. : C850J3 Issued Date : 2004.02.27 Revised Date :2006.07.04 Page No. : 1/5 Features • Low VCE(sat), VCE(sat)=0.2V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1412LJ3 • Pb-free package Symbol BTD2118LJ3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%.