BTD2150N3 Description
CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor BTD2150N3 BVCEO IC RCE(SAT) typ. 2004.03.26 Revised Date.
BTD2150N3 Key Features
- Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A
- Excellent current gain characteristics
- plementary to BTB1424N3
- Pb-free lead plating and halogen-free package