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BTD2150N3 - NPN Epitaxial Planar Transistor

Key Features

  • Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A.
  • Excellent current gain characteristics.
  • Complementary to BTB1424N3.
  • Pb-free lead plating and halogen-free package Symbol BTD2150N3 Outline C SOT-23 B:Base C:Collector E:Emitter E B Ordering Information Device BTD2150N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS complian.

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Datasheet Details

Part number BTD2150N3
Manufacturer Cystech Electonics
File Size 394.44 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2150N3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low VCE(sat) NPN Epitaxial Planar Transistor BTD2150N3 BVCEO IC RCE(SAT) typ. Spec. No. : C848N3-A Issued Date : 2004.03.26 Revised Date : 2018.02.07 Page No. : 1/9 50V 4A 90mΩ Features • Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.