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LB122T - TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

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Designed for use in medium power switching applications.

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Part number LB122T
Manufacturer Dc Components
File Size 248.84 KB
Description TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
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www.DataSheet4U.com DC COMPONENTS CO., LTD. R LB122T DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in medium power switching applications. Pinning 1 = Emitter 2 = Collector 3 = Base .304(7.72) .285(7.52) .105(2.66) .095(2.41) TO-126 .041(1.05) .037(0.95) .154(3.91) .150(3.81) .152(3.86) .138(3.50) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Base Current (pulse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .055(1.39) .045(1.
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