LB122T
LB122T is TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR manufactured by Dc Components.
Description
Designed for use in medium power switching applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
.304(7.72) .285(7.52) .105(2.66) .095(2.41)
TO-126
.041(1.05) .037(0.95) .154(3.91) .150(3.81) .152(3.86) .138(3.50)
Absolute Maximum Ratings(TA=25o C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Base Current (pulse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o
.055(1.39) .045(1.14)
Symbol VCBO VCEO VEBO IC IC IB IB PD TJ TSTG
Rating 600 400 6 800 1600 100 200 20 +150 -55 to +150
Unit V V V m A m A m A m A W o o
.279(7.09) .275(6.99) 1 2 3
3 Typ .052(1.32) .048(1.22) 3 Typ o o
.620(15.75) .600(15.25)
.032(0.81) .028(0.71) .189(4.80) .171(4.34)
.022 (0.55) Typ
3 Typ o
3 Typ Dimensions in inches and (millimeters) o
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) h FE1 h FE2 Toff 380µs, Duty Cycle
Min 600 400 6 10 10 2%
Typ
- Max 10 10 10 0.4 0.8 1 40 0.6
Unit V V V µA µA µA V V V µS IC=10m A IE=10µA
Test Conditions IC=100µA
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) Turn-Off Time (1)Pulse Test: Pulse Width
(1)
VCB=600V VCE=400V VEB=6V IC=100m A, IB=20m A IC=300m A, IB=60m A IC=100m A, IB=20m A IC=0.1A, VCE=10V IC=0.5A, VCE=10V IC=0.3A, VCC=100V, IB1=-IB2=0.06A
Classification of h FE1
Rank Range B1 10~17 B2 13~22 B3 18~27 B4 23~32 B5 28~37 B6...
