EIC1212-4 Datasheet | Excelics Semiconductor

.. ISSUED DATE: 09/20//2007 12.20-12.70 GHz 4-Watt Internally Matched Power FET Features - - - - - - - 12.20-12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 6.5d B Power Gain at 1d B pression 28% Power Added Efficiency -46 d Bc IM3 at PO = 25.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 1100m A Drain Current at 1d B pression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 12.70GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 35.5 5.5 36.5 6.5 UNITS d Bm d B ±0.6 28 1100 -43 -46 2000 -2.5 5.5 2500 -4.0 6.0 o d B % 1300 m A d Bc m A V C/W VDS = 3 V, IDS = 20 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...