EIC1212-8 - Internally Matched Power FET

Features

12.20.
12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

Excelics Semiconductor

Datasheet Details

Part number	EIC1212-8
Manufacturer	Excelics Semiconductor
File Size	113.44 KB
Description	Internally Matched Power FET
Datasheet	EIC1212-8 Datasheet
Additional preview pages of the EIC1212-8 datasheet.

📁 Similar Datasheet

Other Datasheets by Excelics Semiconductor

EIC1212-4 - Internally Matched Power FET
EIC1213-12 - 12.75-13.25 GHz 12-Watt Internally Matched Power FET
EIC1213-4 - Internally Matched Power FET
EIC1213-8 - 9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC1010-25 - 9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC1010-4 - Internally Matched Power FET
EIC1010-8 - Internally Matched Power FET
EIC1010A-12 - Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com EIC1212-8 UPDATED 01/04/2006 12.20-12.70 GHz 8-Watt Internally Matched Power FET Excelics EIC1212-8 .827±.010 .669 .120 MIN FEATURES • • • • • • • • 12.20– 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 27% Power Added Efficiency -46 dBc IM3 at PO = 28.5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 12.20-12.

Published: Aug 4, 2009 |