EIC1212-8 Datasheet | Excelics Semiconductor

.. UPDATED 01/04/2006 12.20-12.70 GHz 8-Watt Internally Matched Power FET Excelics .827±.010 .669 .120 MIN Features - - - - - - - - 12.20- 12.70GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.0 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 27% Power Added Efficiency -46 d Bc IM3 at PO = 28.5 d Bm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Power Added Efficiency at 1d B pression f = 12.20-12.70GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression f = 12.20-12.70GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 12.70GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 38.5 5.5 39.0 6.5 UNITS d Bm d B ±0.6 27 2300 -43 -46 4000 -2.5 3.5 5000 -4.0 4.0 o d B % 2600 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Overall Rth depends on case...