EIC1213-12 - 12.75-13.25 GHz 12-Watt Internally Matched Power FET

Features

12.75.
13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL.

Excelics Semiconductor

Datasheet Details

Part number	EIC1213-12
Manufacturer	Excelics Semiconductor
File Size	123.47 KB
Description	12.75-13.25 GHz 12-Watt Internally Matched Power FET
Datasheet	EIC1213-12 Datasheet
Additional preview pages of the EIC1213-12 datasheet.

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www.DataSheet4U.com EIC1213-12 ISSUED 3-19-09 12.75-13.25 GHz 12-Watt Internally Matched Power FET Excelics EIC1213-12 .827±.010 .669 .120 MIN FEATURES • • • • • • • 12.75– 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41 dBm Output Power at 1dB Compression 6 dB Power Gain at 1dB Compression 25% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW SN .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G IMD3 PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 3700mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 3700mA Gain Flatness f = 12.

Published: Aug 29, 2009 |