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EIC1213-4 - Internally Matched Power FET

Key Features

  • 12.70.
  • 13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH.

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Datasheet Details

Part number EIC1213-4
Manufacturer Excelics Semiconductor
File Size 207.72 KB
Description Internally Matched Power FET
Datasheet download datasheet EIC1213-4 Datasheet

Other Datasheets by Excelics Semiconductor

Part Number Description
EIC1213-12 12.75-13.25 GHz 12-Watt Internally Matched Power FET
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EIC1212-4 Internally Matched Power FET
EIC1212-8 Internally Matched Power FET
EIC1010-25 9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC1010-4 Internally Matched Power FET
EIC1010-8 Internally Matched Power FET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com EIC1213-4 UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET FEATURES • • • • • • • 12.70 –13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 12.7-13.