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EIC1213-4
UPDATED 08/21/2007
12.70-13.20GHz 4-Watt Internally-Matched Power FET
FEATURES
• • • • • • • 12.70 –13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 6.5 dB Power Gain at 1dB Compression 28% Power Added Efficiency -44 dBc IM3 at Po = 25.5 dBm SCL 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression f = 12.7-13.
EIC1213-4 Datasheet
