EIC1213-4 Datasheet | Excelics Semiconductor

.. UPDATED 08/21/2007 12.70-13.20GHz 4-Watt Internally-Matched Power FET Features - - - - - - - 12.70 - 13.20GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 28% Power Added Efficiency -44 d Bc IM3 at Po = 25.5 d Bm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression f = 12.7-13.2GHz VDS = 10 V, IDSQ ≈ 1100m A Drain Current at 1d B pression f = 12.7-13.2GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 25.5 d Bm S.C.L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.2GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 35.5 5.5 TYP 36.0 6.5 ±0.6 28 1100 -42 1280 -44 2080 -2.5 5.5 2880 -4.0 6.0 o UNITS d Bm d B d B % 1300 m A d Bc m A V C/W VDS = 3 V, IDS = 20 m A Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case...