EIC1213-8 Datasheet | Excelics Semiconductor

.. ISSUED 3-19-09 12.75-13.25 GHz 8-Watt Internally Matched Power FET Excelics .827±.010 .669 .120 MIN Features - - - - - - - 12.75- 13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39 d Bm Output Power at 1d B pression 6.5 d B Power Gain at 1d B pression 28% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH .024 .421 YYWW .120 MIN .125 .508±.008 .442 .168±.010 ALL DIMENSIONS IN INCHES .004 .063 .004 .105±.008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL P1d B G1d B ∆G IMD3 PAE Id1d B IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200m A Gain at 1d B pression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200m A Gain Flatness f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈2200m A Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 28.0 d Bm S.C.L VDS = 10 V, IDSQ ≈ 65% IDSS f = 13.25 GHz Power Added Efficiency at 1d B pression f = 12.75-13.25GHz VDS = 10 V, IDSQ ≈ 2200m A Drain Current at 1d B pression Saturated Drain Current Pinch-off Voltage Thermal Resistance 38.5 5.5 39 6.5 UNITS d Bm d B ±0.6 -41 -45 28 2200 3.8 -2.5 3.5 2600 4.6 -4.0 3.8 o d B d Bc % m A A V C/W f = 12.75-13.25GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 40 m A Note: 1) Tested with 50 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 1,2 3) Overall Rth depends on case mounting. MAXIMUM RATING AT...