EIC5359-10 Datasheet | Excelics Semiconductor

.. UPDATED 08/16/2005 - 5.90 GHz 10W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 Features - 5.30-5.90 GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM - HIGH PAE: 30% TYPICAL - +40.5 d Bm TYPICAL P1d B OUTPUT POWER - 10d B TYPICAL G1d B POWER GAIN - HERMETIC METAL FLANGE PACKAGE Excelics EIC5359-10 0.945 0.803 0.024 0.580 YYWW 0.315 0.685 0.010 0.158 0.617 0.004 0.055 0.095 0.055 0.168 Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=5.3-5.9GHz, Vds=10V, Idsq=3200Ma Gain at 1d B pression f=5.3-5.9GHz, Vds=10V, Idsq=3200m A Gain Flatness f = 5.3-5.9GHz, Vds = 10 V, Idsq = 3200m A Power Added Efficiency at 1d B pression f=5.3-5.9GHz, Vds=10V, Idsq=3200m A Drain Current at 1d B pression Output 3rd Order Intermodulation Distortion f=5.9GHz 2 ∆f=10MHz 2-Tone Test. Pout=29.5 d Bm S.C.L Ids @ 65% Idss Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=60m A -43 MIN 39.5 9 TYP 40.5 10 UNIT d Bm d B P1d B G1d B ∆G PAE Id1d B IM3 Idss Vp Rth ±0.6 30 3300 -46 5800 -2.5 2.5 6400 -4 3 o d B % 3800 m A d Bc m A V C/W Thermal Resistance 3(Au-Sn Eutectic Attach) 2) S.C.L = Single Carrier Level. 3) Overall Rth depends on case mounting. Note: 1) Tested with 50 Ohm gate...