EIC5359-8 Datasheet | Excelics Semiconductor

.. 5.30-5.90GHz, 8W Internally Matched Power FET - - - - - - - 5.30-5.90 GHz BANDWIDTH Input/Output Impedance Matched to 50 Ohms +39.5 d Bm Output Power at 1d B pression 10 d B Power Gain at 1d B pression 33% Power Added Efficiency -46 d Bc IM3 at Po = 28.5 d Bm Hermetic Metal Flange Package Excelics EIC5359-8 YM SN ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIC5359-8 SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1d B pression f=5.30-5.90GHz, Vds=10V, Idsq=2200m A Gain at 1d B pression f=5.30-5.90GHz, Vds=10V, Idsq=2200m A Power Added Efficiency at 1d B pression f=5.30-5.90GHz, Vds=10V, Idsq=2200m A Drain Current at 1d B pression Output 3 Order Intermodulation Distortion f=5.90GHz, ∆f=10MHz 2-Tone Test. Pout=28.5d Bm S.C.L Saturated Drain Current Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=40m A rd MIN 38.5 9 TYP 39.5 10 33 2200 UNIT d Bm d B % P1d B G1d B PAE Id1d B IM3 Idss Vp Rth 2600 m A d Bc -43 -46 4000 -2.5 3.5 4500 -4 4 m A V o Thermal Resistance (Au-Sn Eutectic...