EIC5359-4 Datasheet | Excelics Semiconductor

.. ISSUED 5/15/2006 5.3-5.9 GHz 4-Watt Internally Matched Power FET Excelics Features - - - - - - 5.3- 5.9GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 d Bm Output Power at 1d B pression 10.5 d B Power Gain at 1d B pression 34% Power Added Efficiency Hermetic Metal Flange Package ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1d B G1d B ∆G PAE Id1d B IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1d B pression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100m A Gain at 1d B pression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100m A Gain Flatness f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100m A Power Added Efficiency at 1d B pression VDS = 10 V, IDSQ ≈ 1100m A f = 5.3-5.9GHz Drain Current at 1d B pression f = 5.3-5.9GHz Output 3rd Order Intermodulation Distortion ∆f=10MHz 2-Tone Test. Pout=25.5 d Bm S.C.L Vds = 10 V, IDSQ ≈ 65% IDSS f = 5.9GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance Caution! ESD sensitive device. MIN 35.5 9.5 36.5 10.5 UNITS d Bm d B ±0.6 34 1200 -43 -46 2000 -2.5 5.5 2500 -4.0 6 o d B % 1400 m A d Bc m A V C/W VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 m A Note: 1) Tested with 100 Ohm gate resistor. 2) S.C.L. = Single Carrier Level. 3) Overall Rth depends on case...