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EIC5359-4 - Internally Matched Power FET

Features

  • 5.3.
  • 5.9GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency Hermetic Metal Flange Package YM SN.

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Datasheet Details

Part number EIC5359-4
Manufacturer Excelics Semiconductor
File Size 113.42 KB
Description Internally Matched Power FET
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www.DataSheet4U.com EIC5359-4 ISSUED 5/15/2006 5.3-5.9 GHz 4-Watt Internally Matched Power FET Excelics EIC5359-4 FEATURES • • • • • • 5.3– 5.9GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression 34% Power Added Efficiency Hermetic Metal Flange Package YM SN ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 5.3-5.9GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 5.3-5.9GHz Drain Current at 1dB Compression f = 5.3-5.
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