Full PDF Text Transcription for EMB21A03G (Reference)
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EMB21A03G. For precise diagrams, and layout, please refer to the original PDF.
EMB21A03G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ ID 7.5A UIS, Rg 100% Tested Pb‐Free Lead Platin...
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30V RDSON (MAX.) 21mΩ ID 7.5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 7.5 ID TA = 100 °C 5.5 IDM 30 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH, ID=7.5A, RG=25Ω EAS 2.8 Repetitive Avalanche Energy2 L = 0.05mH EAR 1.4 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2 0.8 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.
EMB21A03G Datasheet
