EMB21A03G Datasheet | Excelliance MOS

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ 7.5A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Avalanche Current Avalanche Energy L = 0.1m H, ID=7.5A, RG=25Ω Repetitive Avalanche Energy2 L = 0.05m H Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2 0.8 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.1m H, VG=10V, IL=7.5A, Rated VDS=30V N‐CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction‐to‐Case RJC...