Full PDF Text Transcription for EMB21N03P (Reference)
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EMB21N03P. For precise diagrams, and layout, please refer to the original PDF.
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 21mΩ ID 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIM...
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AX.) 21mΩ ID 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB21N03P LIMITS ±20 6 4.5 24 1.47 0.94 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle 1％ 385°C / W when mounted on a 1 in2 pad of 2
EMB21N03P Datasheet
