EMB21N03P - MOSFET

Excelliance MOS

Datasheet Details

Part number	EMB21N03P
Manufacturer	Excelliance MOS
File Size	174.90 KB
Description	MOSFET
Datasheet	EMB21N03P Datasheet
Additional preview pages of the EMB21N03P datasheet.

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EMB20N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 21mΩ ID 6A G S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Power Dissipation TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VGS ID IDM PD Tj, Tstg EMB21N03P LIMITS ±20 6 4.5 24 1.47 0.94 ‐55 to 150 UNIT V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient3 RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 385°C / W when mounted on a 1 in2 pad of 2 oz copper.

Published: Apr 25, 2017 |