EMB21C03G
EMB21C03G is MOSFET manufactured by Excelliance MOS.
N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH
P‐CH
BVDSS
30V
‐30V
RDSON (MAX.)
21mΩ 35mΩ
7.5A
‐6A
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNIT
Gate‐Source Voltage
N‐CH
P‐CH
±20
±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, ID=7.5A, RG=25Ω(N) L = 0.1m H, ID=‐6A, RG=25Ω(P)
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
IDM IAS EAS
EAR PD Tj,...
