Full PDF Text Transcription for EMB21A03V (Reference)
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EMB21A03V. For precise diagrams, and layout, please refer to the original PDF.
EMB21A03V Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 21mΩ ID 9A UIS, Rg 100% Tested Pb‐Free Lead Plating ...
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30V RDSON (MAX.) 21mΩ ID 9A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 9 ID TA = 100 °C 6.3 IDM 36 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω EAS 5 Repetitive Avalanche Energy2 L = 0.05mH EAR 2.5 Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 2.27 0.9 ‐55 to 150 100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.
EMB21A03V Datasheet
