Full PDF Text Transcription for EMB21C03S (Reference)
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EMB21C03S. For precise diagrams, and layout, please refer to the original PDF.
EMB21C03S N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH P‐CH BVDSS 30V ‐30V RDSON (MAX.) 21mΩ 35mΩ ID 7.5A ‐6A UIS, Rg 100% Tes...
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‐CH BVDSS 30V ‐30V RDSON (MAX.) 21mΩ 35mΩ ID 7.5A ‐6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS N‐CH P‐CH V ±20 ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=7.5A, RG=25Ω(N) L = 0.1mH, ID=‐6A, RG=25Ω(P) Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range ID IDM IAS EAS EAR PD Tj, Tstg 7.5 ‐6 5.5 ‐5 A 30 ‐24 10 ‐10 2.8 1.8 mJ 1.4 0
EMB21C03S Datasheet
