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EMB21C03A - MOSFET

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Part number EMB21C03A
Manufacturer Excelliance MOS
File Size 213.23 KB
Description MOSFET
Datasheet download datasheet EMB21C03A Datasheet
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EMB21C03A N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) N‐CH 30V 21mΩ P‐CH ‐30V 40mΩ D1 G1 D2 G2 ID 8A ‐6A S1 S2 UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS N‐CH P‐CH V ±20 ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH, ID=10A, RG=25Ω(N) L = 0.1mH, ID=‐10A, RG=25Ω(P) Repetitive Avalanche Energy2 L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range ID IDM IAS EAS EAR PD Tj, Tstg 8 ‐6 6 ‐5 A 32 ‐24 15 ‐15 5 5 mJ 2.5 2.5 21 W 8.
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