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FNK8819B - N-Channel Power MOSFET

Description

The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current Schematic diagram.

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Datasheet Details

Part number FNK8819B
Manufacturer FNK
File Size 1.01 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK8819B Datasheet

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Full PDF Text Transcription

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK8819B General Features ● VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.
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