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FNK8A - N-Channel Power MOSFET

Description

TheFNK8A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS =16V,I D =8A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11 mΩ @ VGS=3.8V RDS(ON) < 12mΩ @ VGS=2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number FNK8A
Manufacturer FNK
File Size 1.15 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK8A Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description TheFNK8A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS =16V,I D =8A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 11 mΩ @ VGS=3.8V RDS(ON) < 12mΩ @ VGS=2.
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