Datasheet Details
| Part number | FDD8647L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 380.28 KB |
| Description | N-Channel MOSFET |
| Download | FDD8647L Download (PDF) |
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Overview: FDD8647L N-Channel PowerTrench® MOSFET March 2015 FDD8647L N-Channel PowerTrench® MOSFET 40 V, 42 A, 9.
| Part number | FDD8647L |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 380.28 KB |
| Description | N-Channel MOSFET |
| Download | FDD8647L Download (PDF) |
|
|
|
Max rDS(on) = 9 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 13 mΩ at VGS = 4.5 V, ID = 11 A Fast Switching 100% UIL tested RoHS Compliant This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
Applications Inverter Power Supplies D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 40 ±20 42 52 14 100 33 43 3.1 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 2.9 (Note 1a) 40 °C/W Device Marking FDD8647L Device FDD8647L Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 16 mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation 1 FDD8647L Rev.
1.2 www.fairchildsemi.com FDD8647L N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V 40 ID = 250 µA, referenced to 25 °C VDS = 32 V, VGS = 0 V VGS = ±20 V, VDS = 0 V On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to So
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